Smart device fabrication via precision patterning

ABSTRACT

Embodiments involve smart device fabrication for semiconductor processing tools via precision patterning. In one embodiment, a method of manufacturing a semiconductor processing tool component includes providing a substrate of the semiconductor processing tool component, patterning the substrate to form a sensor directly on the substrate, and depositing a top layer over the sensor. The sensor may include, for example, a temperature or strain sensor. The method can also include patterning the substrate to form one or more of: heaters, thermistors, and electrodes on the substrate. In one embodiment, the method involves patterning a surface of the component oriented towards a plasma region inside of the semiconductor processing tool.

BACKGROUND

1) Field

Embodiments of the present invention pertain to the field ofsemiconductor processing, and in particular, to smart device fabricationfor semiconductor processing tools via precision patterning.

2) Description of Related Art

In semiconductor processing, such as plasma etching or deposition, thetemperature of the processing tool components can affect the rate ofprocessing. For example, chamber lid temperature variation can create alarge gradient in the wafer etch rate and critical dimensions.Non-uniform temperature distributions of processing tool components canresult in particle defects and metal contamination on the semiconductorwafer, as well as affect processing (e.g., critical dimension)uniformity.

However, typical processing tool components are either passive in thesense that they lack temperature feedback mechanisms, or havetemperature feedback mechanisms that lack accuracy. The lack of accuratetemperature feedback in processing tool components can result innon-uniform temperature distributions in the components, leading to highdefect rates on the processed semiconductor wafers, and a shorteneduseful life of the components due to thermal stress induced cracking ofbulk as well as coated components.

SUMMARY

One or more embodiments of the invention involve smart devicefabrication for semiconductor processing tools via precision patterning.

In one embodiment, a method of manufacturing a semiconductor processingtool component involves providing a substrate of the semiconductorprocessing tool component. The method involves patterning the substrateto form a sensor directly on the substrate. The method further involvesdepositing a top layer over the sensor.

In one embodiment, a semiconductor processing tool component includes asubstrate, and a sensor disposed directly on a surface of the substrateoriented towards a plasma region inside of the semiconductor processingtool. A top layer is disposed over the sensor.

In one embodiment, a semiconductor processing system includes asemiconductor processing chamber. The semiconductor processing chamberhas a component including a substrate, and a sensor disposed directly ona surface of the substrate oriented towards a plasma region inside ofthe semiconductor processing tool. A top layer is disposed over thesensor. The component further includes a heating element disposeddirectly on the surface of the substrate oriented towards the plasmaregion inside of the semiconductor processing tool. The semiconductorprocessing system also includes a controller to control a temperature ofthe component with the heating element based on temperature measurementsfrom the sensor.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention are illustrated by way of example,and not by way of limitation, and can be more fully understood withreference to the following detailed description when considered inconnection with the figures in which:

FIG. 1 illustrates an exemplary semiconductor processing tool, whichincludes components with devices patterned directly on the componentsubstrate, in accordance with embodiments of the present invention.

FIG. 2 is a flow diagram of a method of manufacturing a semiconductorprocessing tool component, in accordance with an embodiment of thepresent invention.

FIG. 3A is a plan view of a semiconductor processing chamber lid withdevices patterned directly on the chamber lid substrate, in accordancewith embodiments of the present invention.

FIG. 3B is a cross-sectional view of the semiconductor processingchamber lid of FIG. 3A, in accordance with embodiments of the presentinvention.

FIG. 4 is an exemplary precision plasma spray system for patterningsemiconductor processing tool components with devices, in accordancewith embodiments of the present invention.

FIG. 5 illustrates a block diagram of an exemplary computer systemwithin which a set of instructions, for causing the computer system toperform any one or more of the methodologies discussed herein, may beexecuted.

DETAILED DESCRIPTION

Embodiments include apparatuses, systems, and methods of smart devicefabrication for semiconductor processing tools via precision patterning.

According to embodiments, smart processing tool components includedevices patterned directly on the component substrate to enable feedbackand control of parameters such as temperature and strain. In oneembodiment, a method of manufacturing the smart processing toolcomponents involves precision patterning of one or more devices directlyon a substrate of the component. The method further includes forming atop layer over the devices.

The processing tool components can include devices patterned on anysurface of the component, including surfaces oriented towards a plasmaregion of the processing tool. Processing tool components can includeany component of a processing tool such as, for example, a plasmachamber lid, a showerhead, a processing chamber liner, an electrostaticchuck, a gas distribution plate, a nozzle, and a process kit ring,and/or other processing tool components. The devices patterned directlyon the components can include, for example, one or more of a sensor,electrode, heater, and thermistor.

Embodiments involving precision patterning can enable fine featuredeposition to form devices without requiring masking and othersacrificial layers, resulting in less wasted material. Therefore,embodiments may have the additional benefit of being efficient andcost-effective (due to, e.g., reduced material waste involved in formingthe devices). Additionally, embodiments can enable forming sensors andother devices directly on component substrates to provide feedback andcontrol heating or cooling at specific locations on the component.Therefore, embodiments enable precise and/or uniform temperature controlof the processing tool component. Improved temperature uniformity canenable a lower defect rate of semiconductor wafers processed with thetool. Improved temperature uniformity can also reduce damage to thesemiconductor processing tool components. Precise monitoring ofparameters such as temperature or strain can further enable predictionof the lifetime of the components. Predicting when a component is likelyto fail can enable replacement or repair of the component prior tofailure, which can prevent wafer defects resulting from componentfailure.

FIG. 1 illustrates an exemplary semiconductor processing tool (e.g., aprocessing chamber), which may include components in accordance withembodiments of the present invention. The system 100 is an example of aplasma chamber. The system 100 includes chamber walls 106, and a chamberlid 108. The system 100 includes a showerhead 112 or other mechanism forintroducing process gases 114 or other precursors into the chamber. Asample holder 102 supports a semiconductor wafer 104 over anelectrostatic chuck (ESC) 105. The sample holder 102 may include anelectrode (e.g., cathode) to bias the sample holder 102.

The semiconductor wafer 104 is located between the sample holder 102 anda plasma region 111 that contains plasma 110 during plasma processingwith the system 100. According to embodiments, components of the system100 may be manufactured by a process that includes patterning asubstrate of the component(s) to form a device directly on thecomponent(s), as is illustrated in the method 200 of FIG. 2. Forexample, one or more components of the system 100, such as theshowerhead 112, the chamber lid 108, or the ESC 105, may includetemperature sensors patterned on the substrate of the component.

The system 100 includes a controller (not shown), to control and operatethe system 100. A controller may include a processor, memory, and othercomponents as described below with respect to the computer system 500 ofFIG. 5. According to one embodiment, the controller can control atemperature of the component based on temperature measurements fromsensors patterned on the component substrate. Although FIG. 1illustrates a plasma processing chamber, embodiments can includecomponents for other semiconductor processing tools.

FIG. 2 is a flow diagram of a method of manufacturing a semiconductorprocessing tool component, in accordance with an embodiment of thepresent invention. The method 200 begins with providing a substrate of asemiconductor processing tool component at operation 202. For example, aprecision patterning system can provide a substrate for the showerhead112, the chamber lid 108, or the electrostatic chuck 105 of the system100 of FIG. 1. The method may also (or alternatively) involve providinga substrate for processing tool components not illustrated in FIG. 1,for example, a processing chamber liner, a gas distribution plate, anozzle, a process kit ring, or any other processing tool component.According to embodiments, the substrate of the component may include abulk metal, a bulk metal oxide, a bulk metal nitride, or bulk metalcarbide, where the term “bulk” refers to a single material. Examples ofa bulk metal include Al, Ti, Cu, and Ni. Examples of a bulk metal oxideinclude Al₂O₃, Y₂O₃, or a mix of metal oxides. An example of a bulkmetal nitride is AlN. An example of a bulk metal carbide is SiC. Inother embodiments, the substrate may include more than one material.

At operation 204, the precision patterning system patterns the substrateto form one or more sensors directly on the substrate. Sensors mayinclude, for example, temperature sensors (e.g., thermocouples), strainsensors, and/or other types of sensors. Although examples herein referto patterning the component substrate to form sensors, embodiments mayalso (or alternatively) involve patterning the substrate to form one ormore other devices, such as heaters, electrodes, and/or thermistors.Patterning the substrate to form devices may involve printingtwo-dimensional (2D) or three-dimensional (3D) patterns.

According to embodiments, patterning the semiconductor wafer orsubstrate to form devices involves patterning the substrate with a metaland/or a ceramic. For example, the precision patterning system candeposit one or more of: NiCr, NiAl, NiSil, NiCrSil, CuNi, NiCrAlY, FeNi,PdAg, indium tin oxide (ITO), yttria-stabilized zirconia (YSZ), MgAl₂O₄,Cu, Ni, Pt, Pd, Ag, Al, Mo, W, Al₂O₃, MoSi₂, Si₃N₄, BeO, AlN, oxides ofmanganese, nickel, cobalt, iron, copper and titanium, a dopedpolycrystalline ceramic containing barium titanate (BaTiO3), and/orother metals and ceramics.

In one embodiment, using precision patterning directly on a componentsubstrate enables the formation of devices with small dimensions. Forexample, in one embodiment, a precision patterning system can form asensor having a thickness in the range of 0.005 mm to 0.5 mm, and awidth in the range of 0.05 mm to 2 mm. In one embodiment with a heaterpatterned directly on the component substrate, the heater has athickness in the range of 0.005 mm to 1 mm, and a width in the range of1 mm to 25 mm. In one embodiment with an electrode patterned directly onthe component substrate, the electrode has a thickness in the range of0.005 mm to 1 mm, and a width in the range of 0.05 mm to 2 mm. In oneembodiment with a thermistor patterned directly on the componentsubstrate, the thermistor has a thickness in the range of 0.005 mm to0.5 mm, and a width in the range of 0.05 mm to 2 mm.

Any precision patterning system capable of forming the devices on theprocessing component substrate may be used. A precision patterningsystem is a system that can form 2D or 3D structures (e.g., according toa model) by locally patterning a substrate (e.g., precision plasma spraydeposition). Patterning can include, for example, deposition ofmaterials, etching (removal) of materials, and/or surface chemicalmodification (e.g., surface functionalization such as hydrogenation,hydroxylation, chlorination, fluorination, silylation, and other surfaceproperty modification). In one embodiment involving patterning thecomponent substrate to form 3D structures, the system can build the 3Dstructure layer-by-layer. In one embodiment, the substrate itself canhave a 3D geometry over which the pattern can be deposited. For example,the substrate of a process kit ring may have a curved surface upon whichthe sensor can be directly formed. Other components may have other 3Dgeometries or 2D geometries.

In one embodiment, patterning the substrate involves a precision plasmaspray. An example of a precision plasma spray system is described belowwith respect to FIG. 4. Other precision patterning systems may be used,for example, systems using piezoelectric printheads or other printheads,or point plasma sources (e.g., plasma sources with small aperturescapable of precisely directing plasma streams). The precision patterningsystem may include mechanisms for moving the source (e.g., plasmasource, printhead, etc.) and a sample holder relative to each other topattern the component substrate according to a model. Patterning canalso include selective removal of materials that is being depositedthrough one of the above depositing techniques. Selective removal can bedone by laser cutting, wet etching, dry etching, or by any other methodof selective removal.

At operation 206, the precision patterning system deposits a top layerover the sensor. In embodiments, depositing the top layer can includedepositing one or more of Y₂O₃, yttria-stabilized zirconia (YSZ), YAG,ZrO₂, Al₂O₃, Er₂O₃, Gd₂O₃, a mixture of Y₂O₃ and ZrO₂ (e.g., with aratio of 83:17 mol %), a mixture of Y₂O₃, ZrO₂, Er₂O₃, Gd₂O₃, and SiO₂(e.g., with a ratio of 40:5:40:7:8 mol %), or any rare earth oxide or amixture of rare-earth oxides such as Er₂O₃ or Gd₂O₃. In one embodiment,the top layer has a thickness in the range of 0.005 mm to 1 mm.Deposition of the top layer over the sensor may be performed by the sameprecision patterning system that patterns the substrate to form thesensors or other devices, or by a different system. Other systems mayinclude traditional air plasma spray, vacuum plasma spray, low pressureplasma spray, a spin-coating machine, a chemical vapor deposition (CVD)chamber, an atomic layer deposition (ALD) chamber, ion-assisteddeposition, or any other appropriate deposition system.

In an embodiment where the sensor (or other device) is formed on aplasma-facing surface of the component, depositing the top layer overthe sensor involves depositing a plasma-resistant layer. One suchembodiment can enable forming sensors near the plasma region of asemi-conducting tool, and therefore enable more accurate measurementsthan existing processing tool sensors. In one embodiment, depositing thetop layer over the sensor involves depositing a dielectric layer.

Thus, the method 200 of FIG. 2 enables patterning of semiconductorprocessing components to form devices directly on the componentsubstrate. Embodiments enable formation of multiple devices across asurface of the component. For example, embodiments enable temperaturesensors formed at different points on the component surface, which canenable accurate local temperature measurements. Furthermore, embodimentsenable formation of sensors and other devices on surfaces facing aplasma region of a processing tool, which permits measuring thetemperature in areas that may have the greatest impact on the process.Thus, unlike existing methods for estimating the temperature within theprocessing tool, which may include sensors that are external from theprocessing tool, or located away from the harsh processing environmentto prevent destruction or damage to the sensors, embodiments enabletemperature feedback on surfaces within the processing tool. Improvedtemperature and strain measurements can enable improved temperaturecontrol and uniformity over existing processing tools.

For example, in one embodiment that forms temperature sensors on an ESC,in-situ temperature measurements from the sensors can enable activeheating or cooling to achieve a uniform temperature on the ESC. Auniform temperature on the ESC can result in improved etch rateuniformity across the semiconductor wafer supported over the ESC.

Similarly, in one embodiment that forms heater and a temperature sensoron a processing chamber lid, a controller can automatically adjust thetemperature of the lid in areas experiencing the greatest temperaturechanges to keep the temperature difference below a threshold value(e.g., ΔT<30 C). Limiting the temperature difference on the lid canreduce lid breakage due to thermal stress induced cracking caused by acenter-to-edge temperature difference.

In another example, embodiments can enable prediction of remainingcoating thickness on a component, which, in some embodiments, enablesprediction of remaining component lifetime. For example, a processingchamber liner (e.g., a ceramic coating over an Al substrate) can includestrain sensors to provide strain feedback. The controller can monitorthe strain near a surface of the liner over time to predict the rate oferosion of the coating on the liner.

In another example, a showerhead includes sensors to provide temperatureor strain measurements. Heaters or coolers (e.g., heaters on theshowerhead base) can control the temperature to reduce temperaturedifferences across the showerhead (e.g., center-to-edge temperaturedifferences). Reducing temperature differences on the showerhead canresult in a more uniform etch rate.

In yet another example, a process kit ring can include sensors. Aprocess kit ring surrounds the semiconductor wafer and is typically theclosest component to the semiconductor wafer. Therefore, slight thermalstress related degradation in the process kit ring can significantlyaffect defect rates on the semiconductor wafer. Additionally, processkit rings can be coated with an erosion resistant coating to addresshigh erosion rates typically experienced by process kit rings.Embodiments with sensors patterned on the process kit ring substrate canprovide temperature measurements for the process kit ring, enablingheaters or coolers to adjust the temperature of the process kit ring toincrease temperature uniformity. Similar to the liner described above,embodiments may also involve predicting the lifetime of the process kitring (e.g., based on remaining coating thickness and/or bulk thicknesschange).

Thus, the method 200 of FIG. 2 can be used to manufacture a variety ofsemiconductor processing tool components with sensors and/or otherdevices formed directly on the component substrate. FIGS. 3A and 3Billustrate an example of one such component.

FIG. 3A is a plan view of a semiconductor processing chamber lid 108with devices 302 and 304, in accordance with embodiments of the presentinvention. FIG. 3B is a cross-sectional view of the semiconductorprocessing chamber lid 108 illustrated in FIG. 3A, in accordance withembodiments of the present invention.

Turning to FIG. 3A, the processing chamber lid 108 includesthermocouples 302 located at different locations on the processingchamber lid 108. Thus, a semiconductor processing system including theprocessing chamber lid 108 can measure the temperature at multiplelocations on the processing chamber lid 108. FIG. 3A illustrates threethermocouples, but other embodiments may include one, two, or more thanthree thermocouples or other sensors. In one embodiment, sensors arearranged on the processing chamber lid 108 to detect temperaturedifferences between regions of the processing chamber lid 108, such astemperature differences between the center and edge of the processingchamber lid 108. In contrast to existing mechanisms for determiningtemperatures inside of a semiconductor processing tool, embodimentsenable precise temperature measurements of components in the tool.

The processing chamber lid 108 can also (or alternatively) include otherdevices as discussed above. For example, the processing chamber lid 108can include heaters such as the heating circuit 304. The heating circuit304 can include heating elements arranged in zones to enable individualcontrol of the temperature in different zones of the processing chamberlid 108.

FIG. 3B illustrates a cross-sectional view of the processing chamber lid108. As illustrated in FIG. 3B, the processing chamber lid 108 includesa substrate 305. As described above with respect to operation 202 of themethod 200, in embodiments, the substrate is a bulk metal or ceramicsubstrate. One or more devices 307 are disposed directly on the surfaceof the substrate 305. In the illustrated example, the one or moredevices 307 include the heating circuit 304, the thermocouples 302,and/or other devices. A top layer 308 is disposed over the devices 307.

In one embodiment, the devices 307 are disposed directly on a surface ofthe substrate 305 oriented towards a plasma region inside of thesemiconductor processing tool. In one such embodiment, the top layer 308is a plasma-resistant layer.

In one embodiment, the processing chamber lid 108 includes, or iscoupled to, a circuit 306. The circuit 306 can include, or couple to, acontroller for receiving measurements from sensors, and controlling thedevices (e.g., the heating circuit 304). In one such embodiment, thesystem can control the heating circuit 304 to heat areas of the chamberlid 108 based on temperature measurements from the thermocouples 302.Thus, embodiments including multiple sensors and heaters at differentlocations on the component enable the system can achieve precisetemperature control and/or a uniform temperature of the component.

Although the exemplary embodiments illustrated in FIGS. 3A and 3Binvolve a processing chamber lid, the examples described above can alsoapply to other semiconductor processing tool components.

FIG. 4 is an exemplary precision plasma spray system 400 for patterningsemiconductor processing tool components with devices, in accordancewith embodiments of the present invention.

The precision plasma spray system 400 includes a stage or sample holderfor supporting a component substrate 402 to be patterned in a precisionplasma spray cell. A powder injector 410 introduces a powder into aplasma flame 406 generated by a plasma spray gun 412 within theprecision plasma spray cell, melting the powder. The system then directsthe molten powder to impact the substrate 402 in a pattern to form thesensor or other device 404. For example, the system injects fine powdersinto a small thermal flame, causing the molten powder to accelerate andcollimate, to directly form patterns on the component substrate 402.According to an embodiment, the plasma flame 406 is located at adistance 408 from the component substrate 402 to precisely pattern thecomponent substrate 402 without significantly increasing the temperatureof the component substrate 402, therefore enabling patterning withoutdeforming the patterned component.

FIG. 5 illustrates a computer system 500 within which a set ofinstructions, for causing the machine to execute one or more of thescribing methods discussed herein may be executed. The exemplarycomputer system 500 includes a processor 502, a main memory 504 (e.g.,read-only memory (ROM), flash memory, dynamic random access memory(DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), etc.), astatic memory 506 (e.g., flash memory, static random access memory(SRAM), etc.), and a secondary memory 518 (e.g., a data storage device),which communicate with each other via a bus 530.

Processor 502 represents one or more general-purpose processing devicessuch as a microprocessor, central processing unit, or the like. Moreparticularly, the processor 502 may be a complex instruction setcomputing (CISC) microprocessor, reduced instruction set computing(RISC) microprocessor, very long instruction word (VLIW) microprocessor,etc. Processor 502 may also be one or more special-purpose processingdevices such as an application specific integrated circuit (ASIC), afield programmable gate array (FPGA), a digital signal processor (DSP),network processor, or the like. Processor 502 is configured to executethe processing logic 526 for performing the operations and stepsdiscussed herein.

The computer system 500 may further include a network interface device508. The computer system 500 also may include a video display unit 510(e.g., a liquid crystal display (LCD) or a cathode ray tube (CRT)), analphanumeric input device 512 (e.g., a keyboard), a cursor controldevice 514 (e.g., a mouse), and a signal generation device 516 (e.g., aspeaker).

The secondary memory 518 may include a machine-accessible storage medium(or more specifically a computer-readable storage medium) 531 on whichis stored one or more sets of instructions (e.g., software 522)embodying any one or more of the methodologies or functions describedherein. The software 522 may also reside, completely or at leastpartially, within the main memory 504 and/or within the processor 502during execution thereof by the computer system 500, the main memory 504and the processor 502 also constituting machine-readable storage media.The software 522 may further be transmitted or received over a network520 via the network interface device 508.

While the machine-accessible storage medium 531 is shown in an exemplaryembodiment to be a single medium, the term “machine-readable storagemedium” should be taken to include a single medium or multiple media(e.g., a centralized or distributed database, and/or associated cachesand servers) that store the one or more sets of instructions. The term“machine-readable storage medium” shall also be taken to include anymedium that is capable of storing or encoding a set of instructions forexecution by the machine and that cause the machine to perform any oneor more of the methodologies of the present invention.

For example, a machine-readable (e.g., computer-readable) mediumincludes a machine (e.g., a computer) readable storage medium (e.g.,read only memory (“ROM”), random access memory (“RAM”), magnetic diskstorage media, optical storage media, flash memory devices, etc.), amachine (e.g., computer) readable transmission medium (electrical,optical, acoustical or other form of propagated signals (e.g., infraredsignals, digital signals, etc.)), etc.

Thus, smart device fabrication for semiconductor processing tools viaprecision patterning is described. Embodiments enable patterningcomponent substrates to form devices such as heaters, sensors,thermistors, and electrodes directly on the substrate. Embodimentstherefore enable improved measurements and temperature control of theprocessing tool components, which can improve processing and minimizedefects resulting from processing.

It is to be understood that the above description is intended to beillustrative, and not restrictive. For example, while flow diagrams inthe figures show a particular order of operations performed by certainembodiments of the invention, it should be understood that such order isnot required (e.g., alternative embodiments may perform the operationsin a different order, combine certain operations, overlap certainoperations, etc.). Furthermore, many other embodiments will be apparentto those of skill in the art upon reading and understanding the abovedescription. Although the present invention has been described withreference to specific exemplary embodiments, it will be recognized thatthe invention is not limited to the embodiments described, but can bepracticed with modification and alteration within the spirit and scopeof the appended claims. The scope of the invention should, therefore, bedetermined with reference to the appended claims, along with the fullscope of equivalents to which such claims are entitled.

What is claimed is:
 1. A method of manufacturing a semiconductorprocessing tool component, the method comprising: providing a substrateof the semiconductor processing tool component; patterning the substrateto form a sensor directly on the substrate; and depositing a top layerover the sensor.
 2. The method of claim 1, wherein: patterning thesubstrate comprises patterning a surface of the component orientedtowards a plasma region inside of the semiconductor processing tool; anddepositing the top layer over the sensor comprises depositing aplasma-resistant layer.
 3. The method of claim 1, wherein: depositingthe top layer over the sensor comprises depositing a dielectric layer.4. The method of claim 1, wherein patterning the substrate to form thesensor directly on the substrate comprises forming a three-dimensional(3D) sensor directly on the substrate.
 5. The method of claim 1, whereinthe substrate has a three-dimensional (3D) geometry onto which thesensor is directly formed.
 6. The method of claim 1, wherein patterningthe substrate comprises patterning the substrate to form one or more of:a temperature sensor and a strain sensor on the substrate.
 7. The methodof claim 1, wherein patterning the substrate comprises forming thesensor directly on the substrate with a precision plasma spray.
 8. Themethod of claim 7, wherein forming the sensor directly on the substratewith the precision plasma spray comprises: supporting the substrate in aprecision plasma spray cell; introducing a powder into a plasma flamewithin the precision plasma spray cell, melting the powder; anddirecting the molten powder to impact the substrate in a pattern to formthe sensor.
 9. The method of claim 1, wherein the sensor has a thicknessin a range of 0.005 mm to 0.5 mm.
 10. The method of claim 1, wherein thesensor has a width in a range of 0.05 mm to 2 mm.
 11. The method ofclaim 1, further comprising: prior to depositing the top layer,patterning the substrate to form a heater directly on the substrate. 12.The method of claim 11, wherein the heater has a thickness in a range of0.005 mm to 1 mm.
 13. The method of claim 11, wherein the heater has awidth in a range of 1 mm to 25 mm.
 14. The method of claim 1, whereinthe semiconductor processing tool component comprises one of a plasmachamber lid, a showerhead, a processing chamber liner, an electrostaticchuck, a gas distribution plate, a nozzle, and a process kit ring. 15.The method of claim 1, further comprising: patterning the substrate toform a plurality of devices including one or more of: sensors, heaters,thermistors, and electrodes on the substrate.
 16. The method of claim15, wherein patterning the substrate to form the plurality of devicescomprises patterning the substrate with one or more of a metal and aceramic.
 17. A semiconductor processing tool component comprising: asubstrate; a sensor disposed directly on a surface of the substrateoriented towards a plasma region inside of the semiconductor processingtool; and a top layer disposed over the sensor.
 18. The semiconductorprocessing tool component of claim 16, wherein the sensor comprises oneor more of a temperature sensor and a strain sensor.
 19. A semiconductorprocessing system comprising: a semiconductor processing chambercomprising a component, the component comprising: a substrate; a sensordisposed directly on a surface of the substrate oriented towards aplasma region inside of the semiconductor processing tool; and a toplayer disposed over the sensor; a heating element disposed directly onthe surface of the substrate oriented towards the plasma region insideof the semiconductor processing tool; and a controller to control atemperature of the component with the heating element based ontemperature measurements from the sensor.
 20. The semiconductorprocessing system of claim 19, wherein the sensor comprises one or moreof a temperature sensor and a strain sensor.